以有限元仿真實驗為基礎, 通過高介電常數介質在ECT 傳感器內不同分布時靈敏場的比較研究, 結果表明, 傳感器內部各處靈敏度變化不僅與管內高介電常數介質的大小和分布有關, 還與該點在靈敏場中所處的位置有關。總結一般規律為:高介電常數介質所在的區域以及附近的區域靈敏度變化最大; 越靠近電極附近的區域靈敏度的變化越大; 高介電常數介質對靈敏場的影響在傳感器內部呈馬鞍形分布。
關鍵詞　層析成像　有限元　靈敏場　傳感器
Abstract　U sing finite element method, the sensit ivity dist ribut ions under different dist ribut ions of h igh dielec2 t ric substance were calculated1By comparing these sensit ivity dist ribut ions, found that the disto rt ion of the sensi2 t ivity dist ribut ion has relat ions w ith the size of sect ion of the substance, it s po sit ion in the ECT senso r and also it s po sit ion in the sensit ivity dist ribut ion1The disto rt ion is the heaviest where the h igh dielect ric substance is lo2 cated1The disto rt ion is mo re heavier when the substance near to the ECT elect rode1The disto rt ion of the sensi2 t ivity dist ribut ion by h igh dielect ric substance is like a saddle1
Key words　Tomography　F inite element　Sensit ivity dist ribut ion　Senso r